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基于使用质子修饰策略获得的因胺链接共价有机框架的高性能memristors

Qian Che^1,2, Chenyu Li^1,2, Zhihui Chen^1,2

¹Beijing National Laboratory for Molecular Sciences, CAS Research/Education Center for Excellence in Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.

Angewandte Chemie (International ed. in English)

|August 18, 2024

概括

质子化增强了对电阻随机存取内存的 imine 连接的共价有机框架 (COF). 这一策略改善了电子移位和设备耐用性,为基于COF的先进记忆器铺平了道路.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
电子电子电子电子电子电子电子

背景情况:

由于其结构和化学稳定性,二胺连接的共价有机框架 (COF) 对电阻随机访问存储器 (RRAM) 显示出希望.
当前的基于COF的记忆器面临着来自低伊米因键结合和低电子移位的局限性,阻碍了性能.
捐赠者-接受者 (D-A) 类型的COF特别有趣,但需要对RRAM应用进行优化.

研究的目的:

研究一种质子化策略,用于修改D-A型COF中的imine键.
为了提高COF内部的电子移位和电荷转移特性,以提高记忆器性能.
开发具有卓越耐久性和可靠性的基于COF的高性能记忆器.

主要方法:

应用了质子化策略来修改D-A类型COF (COF-BTT-BPy和COF-BTT-TAPT) 的伊米因键.
质子化和非质子化COF的薄膜被制造成memristor设备.
评估了设备性能指标,包括开启/关闭电流比,驱动电压和耐久性.

主要成果:

质子化显著增强了电子在 imine 键中的移位,并降低了电子注入障碍.
质子化COF-BTT-BPy和COF-BTT-TAPT记忆器表现出高的启/关比 (10^5) 和低的工作电压.
质子化设备表现出了显著的耐力,超过600和1300个周期,几乎是非质子化对应器的两倍. 质子化COF-BTT-TAPT实现了报告中最高的耐力.

结论:

质子化是一种有效的策略,可以提高基于D-A型COF的imine-linked记忆器的性能.
增强的电子移位和电荷转移稳定性有助于优越的设备特性.
这种方法为设计用于下一代电子存储器应用的先进COF提供了通用途径.

关键词:

共价有机框架是共价有机框架.捐赠者/接受者提供者/接受者伊米内伊米内伊米内伊记忆器的使用者质子化调制的质子化调制.

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