稳定氧的纳入超导TaN:一个实验和理论评估
Victor Quintanar-Zamora1,2, Michelle Cedillo-Rosillo1,2, Oscar Contreras-López2
1Posgrado en Nanociencias, Centro de Investigación Científica y de Educación Superior de Ensenada, Ensenada, Baja California 22860, Mexico.
ACS omega
|August 19, 2024
概括
化 (TaN) 薄膜中的氧杂质在热力学上有利,影响超导. 了解这些稳定的氧化物形成对于TaN研究至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 超导电性 超导电性 超导电性
背景情况:
- 超导化 (TaN) 薄膜在技术上是相关的.
- 了解影响TaN特性 (包括超导性) 的因素至关重要.
研究的目的:
- 为了研究超导TaN薄膜中的氧化物形成.
- 分析氧杂质对TaN结构和超导性的影响.
主要方法:
- 在超高真空 (UHV) 中使用反应脉冲激光沉积的薄膜合成.
- 在现场和现场表征:X射线光电子光谱,X射线衍射,传输电子显微镜,四点探针.
- 开始对TaN1-xOx模型进行计算模拟.
主要成果:
- 膜含有大量的氧气 (高达20度). %) 来自剩余气体. %) 来自剩余气体.
- 计算模型显示TaN1-xOx稳定性随氧含量增加而增加,这表明热力学优势.
- 被氧污染的TaN呈现出面中心立方体结构和2.99K的超导性.
结论:
- 氧气融入TaN是热力学上有利的.
- 稳定的氧杂质显著影响TaN结构和超导性.
- 考虑氧杂质对于理解TaN超导和关键温度变化至关重要.
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