维格纳负面体积和非高斯纠与条件移位门的可证实的下界
1<a href="https://ror.org/01mgdzc49">Centre for Quantum Technologies</a>, <a href="https://ror.org/01tgyzw49">National University of Singapore</a>, 3 Science Drive 2, Singapore 117543.
本研究介绍了一种方法,用于检测量子系统中的非高斯纠,使用条件位移门和量子比特读数. 该技术为量化非高斯性和纠而没有复杂状态断层扫描提供了可访问的边界.
科学领域:
- 量子信息科学 量子信息科学
- 量子光学是一种量子光学.
- 量子计算是一种量子计算.
背景情况:
- 电路和腔体量子电动力学 (QED) 使用与高质量腔体分散合的量子比特.
- 用条件移位 (CD) 门探测空腔状态的特征函数.
- 证实非高斯纠对于先进的量子技术至关重要.
研究的目的:
- 提出一种新的方法来证明腔间的非高斯纠.
- 仅使用CD门和量子比特读数来检测纠.
- 建立非高斯度和纠度的实验界限.
主要方法:
- 利用博克纳定理连接维格纳函数负性和部分转位负性.
- 开发一个非高斯纠的条件移位 (CD) 证人.
- 在特定点测量特征函数,以检测纠.
主要成果:
- 证明在像纠的猫和光子减去的挤压真空等状态中检测非高斯纠.
- 证明CD证人同时提供了维格纳负面体积和几何纠度的下限.
- 通过测量特征函数的四个点来实现检测.
结论:
- 拟议的CD证人提供了一种实验性可访问的方法来证明非高斯纠.
- 这种方法绕过了完全量子状态断层扫描的需要.
- 为关键量子信息测量提供了实际的下界.
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