在CoFeB/InSb/CdTe异构结构中观察依赖时刻和场驱动的单向磁电阻
Jiuming Liu1, Liyang Liao2, Bin Rong1
1School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
ACS applied materials & interfaces
|August 20, 2024
概括
我们在CoFeB/InSb/CdTe异构中发现了两个单向磁阻效应. 这些效应,磁矩依赖 (MD-UMR) 和磁场驱动 (FD-UMR),使可调节的旋转器件功能成为可能.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 磁电阻效应是理解电荷-自旋传输的关键.
- 螺旋电子技术的进步依赖于新的磁阻现象.
研究的目的:
- 为了研究CoFeB/InSb/CdTe异构中的单向电磁阻 (UMR) 效应.
- 探索不同UMR机制的共存和相互作用.
主要方法:
- 在 CoFeB/InSb/CdTe 异构结构的制造.
- 在室温下对磁阻性能的描述.
- 分析旋转轨道合和接口效应.
主要成果:
- 观察到磁矩依赖 (MD-UMR) 和磁场驱动 (FD-UMR) 效应的共存.
- MD-UMR归因于InSb的旋转轨道合和CoFeB/InSb接口阻抗.
- 与平面内磁场和在InSb/CdTe接口上的Rashba效应相关的FD-UMR.
- MD-UMR和FD-UMR的相反极性使可调节的磁电阻调制成为可能.
结论:
- CoFeB/InSb/CdTe系统显示可调节的UMR响应.
- 这种异构结构作为一个有前途的构建块,用于多功能旋转式内存和传感器应用.
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