在p型多晶纳米带晶体管中的粒度边界电荷传输上
Prakash Sarkar1, A V Muhammed Ali1, Gurupada Ghorai1
1School of Applied & Interdisciplinary Sciences, Indian Association for the Cultivation of Science (IACS), Jadavpur, Kolkata 700032, India. saiskdmrao@iacs.res.in.
Nanoscale
|August 20, 2024
概括
这项研究分析了铜化物纳米丝带场效应晶体管 (FET) 中的谷物边界传输. 研究人员发现,通道长度会影响谷物边界屏障高度,影响电荷传输特性.
科学领域:
- 材料科学与工程 材料科学与工程
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 颗粒边界 (GB) 由于局部潜在障碍和缺陷状态,在多晶材料中显著影响电荷传输.
- 在场效应晶体管 (FET) 中现有的状态密度 (DoS) 模型通常侧重于接口陷,而不是粒度边界.
研究的目的:
- 为了研究化铜 (CuI) 聚晶纳米带 (PNR) FETs中的谷物边界传输机制.
- 为了将列文森和塞托的GB运输模型与温度依赖的跳跃运输相关联.
- 量化GB屏障高度,激活能量和在谷物边界的DoS.
主要方法:
- 使用e-beam光刻和热蒸发制造具有不同通道面积比的CuI PNR FET.
- 利用莱文森和塞托的模型进行谷物边界运输分析.
- 进行了取决于温度的测量 (80-300 K),以研究跳跃和陷限制的运输,计算关键设备参数.
主要成果:
- 在CuI PNR FET中证明了Levinson和Seto在GB运输中的模型之间的等价性.
- 确定GB屏障高度,激活能量和GB陷状态的密度.
- 计算了费米能量,载体密度,定位长度和跳跃参数的DoS,揭示了通道长度依赖.
结论:
- 提出了一种基于通道长度的GB屏障高度变化模型,该模型归因于平面内电场.
- 在CuI PNR中提供了对电荷载体运输和能量频段水平的定量见解.
- 建立了理解和优化多晶纳米结构材料中的电荷传输的框架.
相关概念视频
01:11P-N junction
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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01:16Biasing of P-N Junction
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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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01:21Carrier Transport
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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
418
01:22Biasing of FET
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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
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01:24Metal-Semiconductor Junctions
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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01:27Biasing of Metal-Semiconductor Junctions
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
232