hBN:.

Zhizhan Qiu1,2, Kristina Vaklinova2, Pengru Huang1,2

  • 1Department of Materials Science and Engineering, National University of Singapore, 117575 Singapore.

ACS nano
|August 20, 2024
PubMed
概括

用扫描道显微镜和光谱学研究了碳化六角化 (hBN:C) 的缺陷中心. 研究人员确定了缺陷的独特原子和电子结构,使光电子学能够进行量子缺陷工程.

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