双层开关设备的现场驱动固态缺陷控制
Thomas Defferriere1, Baoming Wang1, Julian Klein1
1Department of Materials Science and Engineering, MIT, Cambridge, Massachusetts 02139, United States.
ACS applied materials & interfaces
|August 20, 2024
概括
研究人员开发了一个新的框架来控制固体氧化物双层中的可逆离子转移,使用应用电压. 这一突破使得精确操纵氧离子能够用于先进的神经形态记忆应用.
科学领域:
- 材料科学 材料科学 材料科学
- 固态化学 固态化学
- 设备物理 设备物理
背景情况:
- 了解固体氧化物系统中的离子运输对于开发先进的电子设备至关重要.
- 缺陷化学模型传统上是在高温下应用的,这限制了它们在环境温度设备中的使用.
- 双层氧化物中的可逆离子转移仍然是精确控制的挑战.
研究的目的:
- 开发一个框架来控制和研究固体氧化物双层中的可逆离子转移.
- 为了检查Pr0.1Ce0.9O2/La1.85Ce0.15CuO4 (PCO/LCCO) 薄膜双层的电气性质的场驱动变化.
- 为了证明缺陷化学模型对环境温度双层设备的适用性.
主要方法:
- 一个Pr0.1Ce0.9O2/La1.85Ce0.15CuO4 (PCO/LCCO) 薄膜双层的制造.
- 电压的应用以诱导和控制场驱动的离子转移.
- 测量电气性能和缺陷度的变化.
- 使用缺陷化学模型解释结果.
主要成果:
- 通过在周围环境温度附近施加电压实现了氧离子的受控和可逆的再分配.
- 在环境条件下通过缺陷化学模型证明了离子转移的直接解释性.
- 确定缺陷度的系统变化及其对应用电压时薄膜导电性的影响.
- 展示了缺陷化学模型对于环境温度双层设备的相关性.
结论:
- 开发的框架可以在固体氧化物双层中实现精确的电压控制的离子转移.
- 缺陷化学模型适用于环境温度双层设备,促进固体-固体交换的系统研究.
- 这项工作为各种应用,包括神经形态记忆,为大面积,现场驱动,缺陷控制的双层切换设备奠定了基础.
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