相关实验视频

Updated: Jul 22, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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有限面积的膜元表面用于增强单层过渡金属二甲基化物中的轻物质合

Ya-Lun Ho1, Chee Fai Fong2, Yen-Ju Wu3

  • 1Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS), 1-1 Namiki Tsukuba, Ibaraki 305-0044, Japan.

ACS nano
|August 21, 2024
PubMed
概括

我们在2D过渡金属二甲基化物 (TMDCs) 中使用元表面增强了光物质合. 这增加了下一代纳米光子和量子设备的光辐射.

关键词:
在BIC BIC中,我们可以看到.在MoS2的基础上,MoS2在TMDC单层中使用TMDC单层.这就是WSe2Se2的意思.光物质合器的光物质合器膜 膜 膜 膜 膜 膜 膜悬浮的地表层悬浮的地表层.

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Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms08:48

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...