InP

Sung-Yoon Joe1, Beomhee Yoon1, Doyoon Shin2

  • 1Nano Device Application Center, Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.

概括

阳性衰老通过使表面被动并减少刺激火来增强量子点发光二极管 (QLED). 这一过程显著提高了InP QLED中的外部量子效率,随着时间的推移显示了设备性能的提高.