相关实验视频
Updated: Jun 15, 2025

06:43
Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
10.0K
在小纳米级金属氧化物半导体场效应晶体管中分析通道电流噪声
Xiaofei Jia1,2, Qun Wei1, Yan Zhu2
1Xidian University, Xi an, 710071, China.
Small (Weinheim an der Bergstrasse, Germany)
|August 22, 2024
概括
纳米级金属氧化物半导体场效应晶体管 (MOSFET) 中的噪声包括热噪声,压制的通道射击噪声,压制的门道射击噪声和交叉相关性噪声. 这种理解有助于提高MOSFET的运行效率和可靠性.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
背景情况:
- 纳米尺度缩小的MOSFETs改变了通道当前噪声组成.
- 了解噪音对于设备的性能和可靠性至关重要.
研究的目的:
- 为了确定纳米级 MOSFET 中的通道电流噪声组成.
- 建立一个对MOSFET通道当前噪声的预测模型.
主要方法:
- 对90nm MOSFET噪声进行实验分析.
- 蒙特卡洛模拟10纳米的MOSFET噪声.
- 基于设备物理学的通道电流噪声模型的开发.
主要成果:
- 在纳米级 MOSFET 中识别了热噪声,压制的通道射击噪声,压制的门道射击噪声和交叉相关噪声.
- 建立了一个与实验和模拟数据一致的模型.
- 证明频道噪声随着偏差电压的增加而增加.
结论:
- 开发的模型准确地描述了纳米级MOSFET中的噪声.
- 噪声组成在纳米尺度上显著变化.
- 这些发现支持小型MOSFET的提高运营效率,可靠性和寿命.
相关概念视频
Small-Signal Analysis of MOSFET Amplifiers
520
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
520
Characteristics of MOSFET
354
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
354
MOSFET
433
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
433
Biasing of Metal-Semiconductor Junctions
230
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
230
MOSFET: Enhancement Mode
303
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
303
MOSFET Amplifiers
147
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
147

