在Z诊断应用中,从1keV到>30keV的直流X射线源的绝对校准方面取得进展
Timothy J Webb1, Patrick W Lake1
1Sandia National Laboratories, Albuquerque, New Mexico 87111, USA.
The Review of scientific instruments
|August 22, 2024
概括
研究人员开发了一种方法来校准Z设施的X射线源,使用特征性的半导体二极管探测器. 这种技术可以为时间解析和时间集成的X射线诊断提供准确的光谱测量,从而提高数据质量.
科学领域:
- 核工程与物理 核工程与物理
- 材料科学与工程 材料科学与工程
背景情况:
- 在Z设施的X射线诊断需要本地,校准的X射线源来进行准确的表征.
- 现有的低功率曼森X射线源 (低于30keV) 和较新的TruFocus源 (高达100kV) 缺乏随时可用的局部校准.
- 绝对校准通常依赖于外部校准的探测器,这些探测器在本地无法访问.
研究的目的:
- 建立在Z设施的X射线源局部校准的方法.
- 为了实现诊断应用的现有和新型X射线源的精确光谱表征.
- 提高时间解析和时间集成的X射线测量的可靠性和精度.
主要方法:
- 通过控制或推断其活性体积来描述敏感的半导体二极管探测器.
- 使用特征二极管探测器来缩放曼森X射线源的光谱形状,通过Amptek能量分辨探测器进行测量.
- 将开发的校准技术应用于TruFocus的X射线源.
主要成果:
- 标志性的半导体二极管探测器成功地缩放了曼森X射线源的光谱形状.
- 使用这种方法获得的结果与模拟的源光谱有很好的一致性.
- 该技术适用于TruFocus的X射线源,表明其多功能性.
结论:
- 在Z设施中成功实施了X射线源的新,本地校准策略.
- 这种方法提供了一种可靠的方法,可以在没有外部校准探测器的情况下描述X射线光谱形状.
- 开发的技术提高了准确的X射线诊断的能力,这对于Z设施实验至关重要.
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