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Updated: Jun 15, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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由二维ReSe2场发射器表面缺陷引起的场增强

Filippo Giubileo1, Enver Faella2, Daniele Capista3

  • 1CNR-SPIN Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy. filippo.giubileo@spin.cnr.it.

Nanoscale
|August 22, 2024
PubMed
概括

二化物 (ReSe2) 纳米片表现出极好的场辐射特性. 它们的开启电压是可调节的,并且它们表现出高稳定性,使它们适合电子应用.

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Seeded Synthesis of CdSe/CdS Rod and Tetrapod Nanocrystals12:56

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相关概念视频

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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