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自调边缘接触工艺,用于制造高性能过渡金属二甲基化物场效应晶体管

Seokjin Ko¹, Dongryul Lee¹, Jeongmin Kim¹

¹Department of Chemical and Biological Engineering, Seoul National University, Seoul 08826, Republic of Korea.

|August 22, 2024

概括

对于过渡金属二甲基化物 (TMD) 场效应晶体管 (FET) 的新自行调整边缘接触 (SAEC) 工艺克服了接触阻力问题. 这种方法可以提高未来电子产品的电荷传输和设备性能.

科学领域:

材料科学材料科学材料科学
纳米技术纳米技术
半导体物理半导体物理

背景情况:

金属过渡金属二甲基化物 (TMD) 连接面临着诸如道障碍和费米级固定等挑战,阻碍电荷传输和增加接触电阻.
这些局限性阻碍了基于TMD的高效场效应晶体管 (FET) 的开发,用于先进的电子应用.

研究的目的:

为基于TMD的FET开发一种新的自我调整边缘接触 (SAEC) 过程.
克服TMD十字路口的持续性挑战,例如道障碍和费米级固定.
为了增强电荷传输,降低接触电阻,并提高TMD电子中的设备性能.

主要方法:

集成WS2半导体与六角化介电,使用反应性离子蚀刻.
为基于TMD的FET开发了一种先进的自我调整边缘接触 (SAEC) 过程.
精简的半导体制造使得边缘接触形成无需额外的 lithography.

主要成果:

基于SAECTMD的FET表现出了卓越的性能,其高开/关电流比为~10^8.8.
实现了高达120cm^2/V·s的场效应移动性和可控制的极性.
精确的电极定位和最大限度地降低寄生电容,以实现高速特征.

结论:

通过改善电荷传输和设备性能,SAEC过程显著推进了基于TMD的微电子.
该技术与现有Si工艺的兼容性,有助于将其集成到CMOS后的应用中.
这一突破为未来的半导体电子解锁了TMD的潜力.

关键词:

费米级别的固定方式边缘接触接触边缘接触门间隔器门间隔器门间隔器移动性是一种流动性.自行调整的制造工艺.过渡金属二甲基二甲基化物

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