氧化 (Ga2O3) 对快速中子和闪光玛射线的能量依赖的闪反应
D J Valdes1, S Miller2, C Leak2
1University of Nevada, Las Vegas, Las Vegas, Nevada 89154, USA.
The Review of scientific instruments
|August 23, 2024
概括
氧化 (Ga2O3) 显示出作为辐射检测平台的前景,展示了快速中子和玛射线的闪. 这种超宽带差半导体可以实现集成的核聚变中子诊断.
科学领域:
- 材料科学 材料科学 材料科学
- 核仪器仪表 核仪器仪表 核仪器仪表
- 半导体物理 半导体物理
背景情况:
- 氧化 (Ga2O3) 是一种超宽带隙半导体 (4.9 eV),具有联合电子和辐射检测的潜力.
- 快速中子和马射线闪探测对于各种应用至关重要,包括核聚变能源研究.
研究的目的:
- 实验性地证明快速中子和马射线在Czochralski培养的β-Ga2O3.3中的闪.
- 分析Ga2O3闪用于中子检测的能量依赖和时间特征.
- 探索基于Ga2O3的平台的可行性,用于核聚变中子诊断.
主要方法:
- 在洛斯阿拉莫斯中子科学中心使用脉冲中子分裂源进行的实验.
- 使用中子飞行时间 (TOF) 技术与快门强化CCD摄像机.
- 用裂变室量化和校准了中子流量,用于详细的闪分析.
主要成果:
- 观察到1至400MeV的中子能量的能量依赖性中子闪,包括与D-T聚变相关的14.1MeV.
- 检测到一个快速闪响应从一个~4ns FWHM的斯帕拉电玛闪.
- 在22.6米的距离上使用TOF确认了中子能量依赖的闪.
结论:
- β-Ga2O3 具有适用于辐射检测的快速闪特性.
- 该材料的反应依赖于能量和快速,使其适用于中子诊断.
- Ga2O3为综合核聚变中子诊断提供了一个潜在的平台,它结合了闪光和电子.
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