紫外线-B共振腔发光二极管与道连接和介电镜
Estrella Torres1, Joachim Ciers1, Michael A Bergmann1
1Department of Microtechnology and Nanosciense, Chalmers University of Technology, 41296 Gothenburg, Sweden.
概括
我们使用AlGaN.开发了第一个电驱动的紫外B振荡腔发光二极管 (RCLED). 与传统LED相比,这些基于AlGaN的RCLED提供了更好的光谱缩小,定向发射和温度稳定性.
科学领域:
- 光电学是指光电子产品.
- 半导体设备 半导体设备
- 材料科学 材料科学 材料科学
背景情况:
- 紫外线发光二极管 (UV LED) 面临的挑战是光的提取效率较低.
- 响应腔结构可以增强LED的光提取和光谱特性.
- 基于AlGaN的材料对于UV光电子设备至关重要.
研究的目的:
- 为了展示第一个电注入的基于AlGaN的紫外B共振腔发光二极管 (RCLED).
- 调查这些新型RCLED的性能特征,包括光谱特性,发射方向性和温度稳定性.
- 探索改善紫外线LED性能的设计策略.
主要方法:
- 制造基于AlGaN的RCLED,使用由SiO2/HfO2制成的介电分布式布拉格反射器 (DBR).
- 道结合点 (TJs) 的集成,用于横向电流传播和透明接触.
- 通过电化学蚀刻去除基板,以进入设备制造的N面.
主要成果:
- 与普通LED (9.4 nm FWHM) 相比,RCLED的发射频谱显著更窄 (4.3 nm FWHM).
- 通过52°的角度FWHM实现了更有方向性的发射模式,而LED的角度FWHM为126°.
- 与LED相比,RCLED显示出卓越的温度稳定性,光谱峰值红移较小 (~18 pm/K),FWHM变化与LED相比可以忽略不计 (~30 pm/K转移和扩展).
结论:
- 开发的基于AlGaN的RCLED代表了UV光电子技术的重大进步.
- 整合DBR和TJ可以提高电流分布和光学性能.
- 这项工作为提高UV LED效率和开发UV垂直腔表面发射激光器 (VCSEL) 开辟了新的途径.
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