Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

303
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
303
Types of Semiconductors01:20

Types of Semiconductors

572
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
572
MOSFET01:16

MOSFET

433
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
433
Biasing of FET01:22

Biasing of FET

235
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
235
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

316
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
316
Semiconductors01:22

Semiconductors

669
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
669

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

An artificial neuromorphic interface for auditory restoration.

Nature materials·2026
Same author

Sharkskin-Inspired Multisensory Afferent Electronic Skin Capable of Noncontact Materials Recognition and Self-Awareness.

Nano letters·2026
Same author

Perpendicular neuromorphic channels facilitate lateral inhibition for tactile location.

Nature communications·2026
Same author

Flexible monolithic 3D complementary circuits based on 2D semiconductor inks.

Nature communications·2025
Same author

A Robust Biomimetic van der Waals Heterostructure Visual Neuromorphic Device for Multiscale In-Sensor Reservoir Computing.

ACS nano·2025
Same author

Multimodal Double-Helix Fiber Sensors for Distinguishable Pressure and Strain Detection in Wearable Sensory Applications.

ACS applied materials & interfaces·2025

相关实验视频

Updated: Jun 15, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K

交联晶体管使用可扩展的石墨烯纳米带.

Mingxin Sun1,2, Zhipeng Xu1,2, Shangda Qu1,2

  • 1Institute of Photoelectronic Thin Film Devices and Technology, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, College of Electronic Information and Optical Engineering, Engineering Research Center of Thin Film Photoelectronic Technology of Ministry of Education, Smart Sensing Interdisciplinary Science Center, Nankai University, Tianjin 300350, China.

The journal of physical chemistry letters
|August 26, 2024
PubMed
概括

研究人员开发了一种新的石墨烯纳米带突触晶体管 (GNST) 用于神经形态电子. 这种图案设备具有可调节的突触可塑性,在图案识别任务中达到84.5%的准确性.

更多相关视频

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K

相关实验视频

Last Updated: Jun 15, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.5K
Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

3.2K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K

科学领域:

  • 材料科学 材料科学 材料科学
  • 神经科学是一个神经科学.
  • 电气工程 电气工程

背景情况:

  • 石墨烯的电性能显示出神经形态电子学的前景.
  • 现有的设备缺乏模式,限制了它们的应用.
  • 先进的神经形态装置需要有图案的石墨烯纳米结构.

研究的目的:

  • 展示一个可扩展的制造方法,用于石墨烯纳米带突触晶体管 (GNSTs).
  • 为了研究GNSTs可调节的突触可塑性.
  • 探索GNSTs在模式识别和经典调节中的应用.

主要方法:

  • 石墨烯纳米带 (GNR) 道的制造,使用电动力学打印作为光刻面具.
  • 通过尖峰持续时间,频率和数量调节的GNST突触可塑性的表征.
  • 在模式识别和帕夫洛夫式调节范式中对设备性能的评估.

主要成果:

  • 成功制造具有可调节突触可塑性的GNSTs.
  • 通过纳米丝带宽度来证明能效,双极性质和受调的反应.
  • 在模式识别任务中实现了84.5%的准确性.
  • 证明了对帕夫洛夫的古典化条件的适用性.

结论:

  • 开发的GNST是第一个基于GNRs的突触晶体管.
  • 可扩展的图案GNR的制造使先进的神经形态应用成为可能.
  • GNSTs为未来节能和高性能神经形态计算提供了一个有前途的平台.