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Updated: Jun 15, 2025

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通过2D VSe2/Bi2Se3异构结构中的强接口合诱导的量子状态

Xin Wang1, Donghui Wang1, Yuxiao Zou2

  • 1College of Chemistry, Beijing Normal University, Beijing 100875, PR China.

ACS nano
|August 26, 2024
PubMed
概括

研究人员制造了一个单层 (SL) 1T-VSe2/Bi2Se3异构结构,采用moiré图案. 在费米能量附近观察到一个强大的量子状态,受应变和电荷再分配的影响.

关键词:
在VSe2 / Bi2Se3 / Bi2Se3 中.收费重新分配重新分配侧向异构结构的异构结构.莫伊尔格子格子量子状态的量子状态结构变形 结构变形

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