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Updated: Jun 15, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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精确定制 WSe2 通过范德瓦尔斯的极性 木金调制接触

Lingan Kong1, Hao Liu1, Xiaowei Wang1

  • 1Songshan Lake Materials Laboratory, University Innovation Park, Dongguan 523808, China.

Nano letters
|August 26, 2024
PubMed
概括

研究人员开发了一种范德瓦尔斯集成方法,使用 (Bi) 和金 (Au) 接触器控制二化 (WSe2) 的电极性. 这使得精确的n型,双极和p型调能够用于先进的2D电子.

关键词:
补充的逻辑函数是补充的逻辑函数.接触金属比率是指接触金属比率.高流动性的高流动性.极性控制控制的极性控制vdW 金属整合 vdW金属整合

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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