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Updated: Jun 15, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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在WS2-基于FET与MoS2的接触电阻工程:一个统计方法

Małgorzata Giza1, Michał Świniarski1, Arkadiusz P Gertych1

  • 1Faculty of Physics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland.

ACS applied materials & interfaces
|August 26, 2024
PubMed
概括

研究人员开发了一种新的方法来降低2D材料设备中的接触电阻. 通过插入二硫化 (MoS2) 的中间层,他们实现了超过60%的阻力降低和二硫化 (WS2) 场效应晶体管 (FET) 的性能提高十倍.

关键词:
接触电阻 接触电阻 接触电阻场效应晶体管电晶体管.在黄金辅助转账中使用黄金.这里是中间层的中间层.过渡金属二甲基二甲基化物范德瓦尔斯异构结构的异构结构

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