在铁磁性Skyrmions中消除Skyrmion大厅效应
Xudan Zhang1,2, Guolin Wan1,2, Jie Zhang2
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
Nano letters
|August 27, 2024
概括
研究人员开发了一种新的方法,通过插入非磁性元素来消除铁磁体中的Skyrmion Hall效应. 这一策略稳定了独特的磁性结构,为实际的 skyrmion 应用铺平了道路.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 斯基尔米安大厅效应 (SkHE) 阻碍了磁性斯基尔米安在旋转器件中的应用.
- 现有的补偿方法在人造反铁磁体和铁磁体中是有效的,但在内在铁磁体中却不是.
- 消除铁磁铁中内在的SkHE是技术进步的一个重大挑战.
研究的目的:
- 提出和研究一种新的策略,以消除范德瓦尔斯双层铁磁体中内在的Skyrmion Hall效应.
- 通过受控的相互作用来探索层间双重子/四重子的稳定.
- 确定新的拓磁性结构及其属性.
主要方法:
- 涉及将非磁性元素 (Sr,Ba) 插入范德瓦尔斯双层铁磁体 (VSe2) 的理论建议.
- 分析了交换相互作用,Dzyaloshinskii-Moriya相互作用 (DMI) 和磁晶异构之间的相互作用.
- 具有零拓电荷数 (Q) 的拓磁性结构的识别.
主要成果:
- 通过通过相反的DMI,通过控制极性来创建层间双重子/四重子,证明了消除SkHE的策略.
- 确定了十个具有零拓电荷数的拓磁性结构,在Sr/Ba间隙VSe2.2中.
- 在双磁性原子层中开发了各种磁性配置的相位图.
结论:
- 拟议的插入策略有效地消除了铁磁铁中固有的SkHE.
- 控制的拓旋转纹理和Q锁定为强大的基于skyrmion的技术提供了途径.
- 这些发现为未来对拓磁性和旋转磁体的研究提供了关键指导.
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