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Updated: Jul 20, 2026

In-situ Tapering of Chalcogenide Fiber for Mid-infrared Supercontinuum Generation
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In-situ Tapering of Chalcogenide Fiber for Mid-infrared Supercontinuum Generation

Published on: May 27, 2013

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通过光学注射深层次过渡光谱学解决基于炭化物的异质连接的陷分布

Xin Chen1, Yujie Yang1, Qianqian Lin1

  • 1Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, Hubei Luojia Laboratory, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, P. R. China.

The journal of physical chemistry letters
|August 28, 2024
PubMed
概括

这项研究揭示了使用光学注射深层瞬态光谱学在二甲硫化物异质连接中非均的陷分布. 了解这些缺陷分布对于改进石化半导体光电子技术至关重要.

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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

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Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films08:38

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films

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相关概念视频

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...