用蒙特卡洛模拟分析小纳米级MOSFET中的3D通道电流噪声
Wenpeng Zhang1, Qun Wei1, Xiaofei Jia1
1School of Physics, Xidian University, Xi'an 710071, China.
Nanomaterials (Basel, Switzerland)
|August 28, 2024
概括
这项研究使用3D蒙特卡洛模拟来分析10纳米MOSFET中的噪声. 结果显示,压抑的射击噪声在低温下占主导地位,而热噪声随着温度的增加而增加.
科学领域:
- 半导体物理 半导体物理
- 纳米电子学纳米电子学
背景情况:
- 晶体管中的噪声产生机制随着尺寸缩小到纳米而发生变化.
- 现有的蒙特卡洛模拟通常集中在2D设备或更大的纳米尺寸上,对于小型纳米晶体管而言,噪声理论有限.
研究的目的:
- 建立一个用于分析纳米级晶体管中的噪声的3D设备模拟过程.
- 为了研究10nm基金属氧化物半导体场效应晶体管 (MOSFET) 的通道电流噪声特性.
主要方法:
- 采用3D蒙特卡洛 (MC) 模拟技术来建模10nm通道长度的MOSFET.
- 模拟通道电流噪声的原始数据和静态测试的计算排水输出电流.
- 创建了一个3D潜力分布图,并计算了通道电流噪声的功率光谱密度.
主要成果:
- 在低温下,通道电流噪声主要由压抑的射击噪声主导;热噪声比例随着温度的增加而增加.
- 在正常情况下,噪音包括压抑的射击噪音,热噪音和交叉相关的噪音.
- 射击噪声是主要的噪声源,随着偏向电压的降低,其抑制率会下降.
结论:
- 3D MC模拟准确地捕捉了10纳米MOSFET中的噪声行为,与实验和理论发现保持一致.
- 了解噪声组件对于设计先进的纳米电子设备至关重要.
- 噪声特征受到温度,偏向电压和设备尺寸的显著影响.
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