取决于温度的近红外光谱电子辐射Ceria单晶的电子辐射
Jean-Marc Costantini1, Keevin Béneut2, Maxime Guillaumet2
1Université Paris-Saclay, CEA, Service de Recherche en Matériaux et Procédés Avancés, 91191 Gif-sur-Yvette, France.
Materials (Basel, Switzerland)
|August 29, 2024
概括
电子辐射在氧化 (CeO2) 晶体中产生空隙. 这些空缺显示出与其电荷状态和缺陷电离能相关的明显的红外吸收波段.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 陶制品 在陶方面.
背景情况:
- 氧化 (CeO2) 是催化和电子学中至关重要的材料.
- 了解CeO2的缺陷行为对于优化其性能至关重要.
- 电子辐射是一种诱导材料缺陷的方法.
研究的目的:
- 为了研究电子辐射CeO2单晶的光学特性.
- 描述与缺陷相关的吸收带.
- 为了确定CeO2带间隙中点缺陷的能量水平.
主要方法:
- 福利埃变换红外光谱 (FTIR) 检测是在未经染和经过辐射的CeO2晶体上进行的.
- 测量是在20K至500K的温度范围内进行的.
- 吸收带被分析为温度和电子能量 (1.4 MeV和2.5 MeV) 的函数.
主要成果:
- 在4000厘米-1和12000厘米-1.1之间观察到明显的FTIR吸收波段.
- 这些频段的强度比表明热激活的过程.
- 确定了大约26,000厘米-1 (~3.2 eV) 的缺陷电离能.
结论:
- 观察到的吸收频段被分配给Ce空缺的不同充电状态 (0至-4).
- 这些Ce空隙是由1.0 MeV以上的电子辐射过程中弹性碰撞造成的.
- 该研究提供了关于陶点缺陷电子结构的见解.
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