Si-Dopedβ-Ga2O3,使

Hui Zeng1,2, Chao Ma2, Meng Wu3

  • 1College of Science, Hunan University of Science and Engineering, Yongzhou 425199, China.

PubMed
概括

用添加的2Dβ-Ga2O3的应变工程增强了电子的移动性. 这项研究揭示了灵活纳米电子应用的可调节电子特性.