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实时光谱圆测量用于薄膜多源联合蒸发中的流量校准:应用到CuInSe₂沉积率变化中的应用

Dhurba R Sapkota¹, Balaji Ramanujam¹, Puja Pradhan¹

¹Wright Center for Photovoltaics Innovation & Commercialization, Department of Physics & Astronomy, University of Toledo, Toledo, OH 43606, USA.

Materials (Basel, Switzerland)

|August 29, 2024

概括

这项研究引入了一种使用实时光谱圆测量 (RTSE) 来校准薄膜沉积流量的新方法. 这种技术通过控制沉积率和原子比率来优化铜化 (CIS) 光伏吸收器.

科学领域:

材料科学材料科学材料科学
薄膜沉积的情况
太阳能光伏发电是如何实现的

背景情况:

精确控制沉积率和原子组成对于制造高性能薄膜光伏吸收器至关重要.
多源热联合蒸发需要精确的流量校准,以进行可复制材料合成.

研究的目的:

开发和验证用于使用实时光谱圆测量 (RTSE) 的多源热共同蒸发的流量校准方法.
应用这种方法来制造和研究铜化 (CIS) 薄膜光伏吸收器.
通过控制沉积率和原子比率,建立一个预测校准图来优化CIS属性.

主要方法:

实时光谱圆测量 (RTSE) 用于监测和确定Cu和In2Se3层的沉积率 (R_eff) 作为源温度 (T_Cu,T_In) 的函数.
Cu和In原子流的初步估计是基于完全原子合并和散装式原子度的假设进行的.
对校准薄膜进行了原子度校正,从而生成了与T_Cu,T_In,原子比 (y = [Cu]/[In]) 和R_eff相关的新型校准图.

主要成果:

作为源温度的函数,RTSE有效地确定了沉积率 (R_eff).
创建了一个校准图,可以预测T_Cu-T_In平面内的原子比[Cu]/[In]和R_eff.
开发的方法允许通过控制y和R_eff来优化CIS作为光伏吸收器的特性.

结论:

开发的基于RTSE的流量校准方法可以精确控制薄膜沉积参数.
这种方法有助于优化铜化 (CIS) 的光伏吸收特性.
新的校准图作为一个有价值的工具,可用于高性能薄膜太阳能电池的可重复制造.

关键词:

电影编剧电影编剧电影编剧片沉积率的比率是多少薄膜的厚度薄膜的厚度多种来源的共同蒸发.实时光谱圆测量薄膜沉积是一种薄膜沉积.薄膜沉积校准细膜沉积的校准

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