相关实验视频

Updated: Jun 19, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

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对计算 GaN-on-Si 长轴晶圆中脱位密度的方法进行比较研究

Yujie Yan1, Jun Huang1, Lei Pan1

  • 1JFS Laboratory, Wuhan 430074, China.

Micromachines
|August 29, 2024
PubMed
概括

这项研究比较了四种方法来测量化在 (GaN-on-Si) 晶片中的脱位密度. 高分辨率X射线衍射 (HR-XRD) 被强调为评估晶体质量的可靠方法.

关键词:
在Si上的GaN-on-Si描述方法的表征方法.失位密度是指失位的密度.表面轴状晶片是一种表轴状晶片.高分辨率的X射线衍射射线.

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相关概念视频

Crystal Density01:19

Crystal Density

The crystal lattice structure of a material allows us to determine how many molecules exist in its unit cell. With this information, alongside the unit-cell parameters - three distance parameters (a, b, c) and three angular parameters (α, β, γ).Density (ρ) = (Z × M) / (a × b × c × NA)where:Z is the number of formula units per unit cellM is the molar mass of the substancea, b, and c are the edge lengths of the unit cellNA is Avogadro’s numberFor a simple cubic lattice, atoms are located only at...