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Updated: Apr 13, 2026

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在温度循环下,在介质中TSV结构的可靠性模拟分析

Wenchao Tian1,2, Haojie Dang1, Dexin Li1

  • 1School of Electro-Mechanical Engineering, Xidian University, Xi'an 710000, China.

Micromachines
|August 29, 2024
PubMed
概括

先进的半导体包装面临着可靠性挑战. 本研究分析了Through Silicon Via (TSV) 热力学应力,发现了关键点并估计了3.17 × 10^5周期寿命,缺陷可能会提高可靠性.

关键词:
电缺陷 电缺陷 电缺陷多层插座器多层插座器可靠性的可靠性温度循环的温度循环.

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