一项关于p-GaN HEMT电源设备的动态开关特性研究
Chen Fan1,2, Haitao Zhang3,4,5, Huipeng Liu2
1School of Information Science and Technology, North China University of Technology, Beijing 100144, China.
Micromachines
|August 29, 2024
概括
本研究引入了一种新的测试系统,用于分析p-GaN HEMT设备的动态切换特性. 电压改变了寄生电容和值电压,影响了设备的稳定性和性能.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 半导体物理 半导体物理
背景情况:
- 化 (GaN) 高电子流动性晶体管 (HEMT) 对功率电子非常重要.
- 了解动态切换行为是设备稳定性和可靠性的关键.
- 之前的研究重点是动态电阻,而不是动态切换特性.
研究的目的:
- 为了研究p-GaN HEMT设备的动态切换特性.
- 分析电压对这些特征的影响.
- 了解导致切换行为变化的潜在机制.
主要方法:
- 开发和应用一个创新的动态切换测试系统.
- 对p-GaN HEMT设备的电应力应用.
- 对值电压和寄生电容变化的分析.
- 提取和比较压力之前和之后的切换波形.
主要成果:
- 电应力诱导陷电离,影响设备的电潜力.
- 寄生电容和值电压被电应力改变.
- 容量和值电压的动态变化在设备之间有所不同.
- 测试系统量化地测量了由于电压导致的参数漂移.
结论:
- 动态切换特性为GaN设备稳定性提供了洞察力.
- 电压诱导的陷电离是影响开关的主要机制.
- 容量变化的设备对设备的变化导致不同的动态切换行为.
- 开发的测试系统预测了参数漂移,有助于稳健的应用程序设计.
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