双向和操作可控制的内存计算,用于用行和列定向SRAM (RC-SRAM) 执行布尔逻辑和搜索操作
Han Xiao1,2, Ruiyong Zhao1,2, Yulan Liu1,2
1Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200031, China.
Micromachines
|August 29, 2024
概括
一个新的RC-SRAM比特单元能够实现高效的内存计算,克服数据处理的限制. 这种新架构加速了逻辑和搜索操作,提高了大规模数据处理的性能.
科学领域:
- 计算机工程 计算机工程
- 半导体设备 半导体设备
- 记忆的架构 记忆的架构
背景情况:
- ·诺伊曼架构面临的局限性与日益增长的数据需求.
- 内存计算为内存瓶提供了一个解决方案.
研究的目的:
- 为增强内存计算引入新的10T SRAM位元 (RC-SRAM).
- 为了实现双向,可操作和可控制的内存逻辑和搜索操作.
主要方法:
- 设计和验证一个新型的10T SRAM比特单元与行和列控制线 (RC-SRAM).
- 实施值控制的逻辑门,以提高传感精度和减少面积.
- 使用28纳米CMOS技术进行制造和测试.
主要成果:
- RC-SRAM架构支持灵活的,双向的内存逻辑和搜索操作.
- 门控制的逻辑门可以减少电路面积,提高准确性.
- 实现的高运行频率:775MHz (双向搜索),567MHz (搜索),759MHz (布尔逻辑行),683MHz (布尔逻辑列) 在0.9V和25°C.
结论:
- RC-SRAM为内存计算提供了灵活和高性能的解决方案.
- 与传统架构相比,拟议的设计显著增加了工作频率.
- 这一进步解决了大规模数据处理的挑战.
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