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基于垂直雪崩光二极管 (VAPD) 的CMOS图像传感器的强大的像素设计方法

Akito Inoue¹, Naoki Torazawa¹, Shota Yamada¹

¹Panasonic Industry Co., Ltd., 1006, Oaza Kadoma, Kadoma-shi 571-8506, Osaka, Japan.

Sensors (Basel, Switzerland)

|August 29, 2024

概括

这项研究介绍了基于垂直雪崩光二极管的CMOS图像传感器的新像素设计. 该设计确保在不同条件和强光下稳定运行,提高性能和可靠性.

科学领域:

固态物理固态物理
图像传感器技术图像传感器技术
微电子工程微电子工程

背景情况:

传统的CMOS图像传感器面临着像素隔离,对环境变化的敏感性以及在强光下性能等挑战.
垂直雪崩光二极管 (VAPD) 具有提高灵敏度的潜力,但需要强大的像素设计才能实际应用.

研究的目的:

开发和验证基于VAPD的CMOS图像传感器的强大的像素设计方法.
解决关键的实际因素,包括无保护环隔离,对电压/温度不敏感,在强光照明下稳定运行.

主要方法:

通过优化电场度和隔离之间的权衡,开发了一个无保护环的像素隔离布局.
实现了全局反电阻,以抑制光子检测效率和暗计数率的变化.
引入了像素溢出晶体管,以提高对强光照明的抵抗力.

主要成果:

没有保护环的设计通过模拟和实验性表征来验证.
全球反有效地减少了不同电压和温度的设备特征变化.
制造的VAPD-CIS表现出强大的性能,通过测试122个芯片和1000小时的高温/强光测试来验证.

结论:

提出的像素设计方法显著提高了基于VAPD的CMOS图像传感器的稳定性和稳定性.
该设计克服了关键的局限性,使传感器在苛刻的环境条件和高光强度下可靠运行.

关键词:

在CMOS图像传感器 (CIS) 中.警卫戒指警卫戒指警卫戒指强大的像素设计.单光子雪崩二极管 (SPAD) 是一种飞行时间传感器

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