高-κ介电集成对基于ALD的MoS2场效应晶体管性能的影响
Reyhaneh Mahlouji1, Yue Zhang2, Marcel A Verheijen1,3
1Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
ACS applied nano materials
|August 29, 2024
概括
在二硫化物 (MoS2) 场效应晶体管 (FET) 上,高κ介电物的等离子增强原子层沉积 (PE-ALD) 对纳米电子学至关重要. 介电处理参数,如固电量,碳杂质和表面氧化,显著影响MoS2 FET性能.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 固态物理 固态物理
背景情况:
- 高-κ介电材料对于缩放二硫化物 (MoS) 场效应晶体管 (FET) 是必不可少的.
- 原子层沉积 (ALD) 为MoS2生长和介电集成提供了一个有前途的途径,补充了传统方法,如剥落和化学蒸汽沉积 (CVD).
- 了解介电性质和MoS2特征之间的相互作用对于推进纳米电子设备至关重要.
研究的目的:
- 研究通过等离子体增强 (PE-) ALD和热ALD沉积的高-κ介电物的影响,对大面积的MoS2FETs的电特性.
- 确定影响MoS2FET性能和兴奋剂的介电材料的关键处理参数.
- 用先进的显微镜技术分析介电沉积引起的表面化学和结构变化.
主要方法:
- 使用等离子体增强原子层沉积 (PE-ALD) 的大面积MoS2增长.
- 使用PE-ALD和热ALD沉积高κ介电物 (HfO,AlO或两者) .
- MoS2 FET 的电气特性.
- 表面化学分析和高分辨率扫描传输电子显微镜 (HR-STEM).
主要成果:
- 介电止电量,碳杂质含量和MoS2表面氧化显著影响MoS2 FET特征和兴奋剂.
- PE-ALD HfO2膜 (在100°C时) 没有氧气,而AlO2膜则富含氧气.
- 在低温下沉积的介电材料中的碳杂质有助于MoS2FETs的n型性能.
- HfO2或AlO2的PE-ALD氧化了MoS2表面,而热ALDAlO2对其影响最小.
结论:
- 通过仔细控制介电处理参数,包括静电量,碳合并和表面氧化,可以实现最佳的MoS2FET性能.
- 一种堆叠的介电方法,使用热ALDAlO2作为HfO2下面的接口层,减轻MoS2表面氧化,并增强整体介电常数.
- 这项研究为未来纳米电子应用的高性能ALD-based MoS2 FETs的合理设计和制造提供了关键的见解.
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