关于单层ZrX3 (X = S,Se,Te) 的结构,电子和光学性能的第一原则研究
Zhi-Yuan Qiu1, Ya-Le Tao2, Qi-Jun Liu1
1Bond and Band Engineering Group, School of Physical Science and Technology, Southwest Jiaotong University, Chengdu, 610031, People's Republic of China.
Journal of molecular modeling
|August 29, 2024
概括
单层ZrX3 (X=S,Se,Te) 呈现出由应变影响的半导体特性. 这些二维材料表现出强烈的光学异构性,这对于设计可见光学设备至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 计算化学计算化学
背景情况:
- 单层过渡金属化物 (TMC) 是一个有前途的二维材料.
- 了解它们的电子和光学特性是新型应用的关键.
研究的目的:
- 研究单层ZrX3 (X=S,Se,Te) 的电子和光学性能.
- 探索应变对它们特性的影响.
- 为选择基板和设计光学设备提供指导.
主要方法:
- 密度函数理论 (DFT) 的计算.
- 使用了CASTEP代码,使用了保存规范的伪潜能.
- 在交换相关函数中使用了Perdew-Burke-Ernzerhof (PBE) 通用梯度近似法 (GGA).
主要成果:
- ZrX3材料具有半导体特性,Zr-d和X-p轨道分别形成导电带和价值带.
- 带隙和状态密度受到b轴和双轴应变的显著影响.
- 观察到强烈的光学异质性,在不同的极化方向上有不同的光吸收和反射率 ([100]与[010]).
结论:
- 应变工程可以调整2D ZrX3.3的电子特性.
- 独特的光学异构性使得ZrX3适用于可见光学设备.
- 结果为制造2D ZrX3材料的基板选择提供了见解.
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