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Updated: Jun 14, 2025

Analysis of Contact Interfaces for Single GaN Nanowire Devices
11:13

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

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根据使用核心外架构的GaN/Si3N4纳米线的热传输和封闭效应的定制

Yuting Yang1, Kunpeng Yuan1, Zhaoliang Wang1

  • 1College of New Energy, China University of Petroleum (East China), Qingdao 266580, People's Republic of China.

Journal of physics. Condensed matter : an Institute of Physics journal
|August 29, 2024
PubMed
概括

具有纳米支柱的核心纳米线 (NWs) 通过散射声子显著降低了导热性. 本研究探讨了GaN/Si3N4 NWs.热传输调节的接口效应.

关键词:
GaN/Si3N4核心外纳米线的纳米线.封闭效应的封闭效应当地的共振振动.分子动力学分子动力学纳米柱式接口接口

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