光对耐力,导电和电容 (MEMRIC) 在基于氧化铜 (CuO) 的纳米结构随机访问记忆器件中的共存的影响
Chandra Prakash1, Ankit K Yadav1, Ambesh Dixit1
1Advanced Materials and Device Laboratory (A-MAD Lab), Department of Physics, Indian Institute of Technology, Jodhpur, Rajasthan, 342030, India.
概括
这项研究表明,一个单一的设备显示 memresistance,memcapacitance 和 meminductance,增强光的稳定性. 这些特性对于开发先进的低功耗电子和光电阻器至关重要.
科学领域:
- 材料科学 材料科学 材料科学
- 电气工程 电气工程
- 纳米技术 纳米技术
背景情况:
- 非挥发式模拟电阻开关内存设备对于下一代电子产品至关重要.
- 在一个单一的设备中同时进行记忆,记忆容量和记忆诱导行为是非常理想的,但很难实现.
研究的目的:
- 为了证明在单个Cu/CuO/SS装置中存在的mem电阻,mem电容和mem导电的共存.
- 调查光照明对设备性能和稳定性的影响.
- 探索低功耗电子和光电阻的潜在应用.
主要方法:
- 铜 (Cu) /铜氧化物 (CuO) /不钢 (SS) 记忆器件的制造.
- 电气性质的表征,包括I-V曲线,扫描速率的依赖性,耐用性和保留.
- 在不同的光照条件下分析设备的行为.
主要成果:
- 观察到非挥发性双极模拟电阻切换与共存的抗性,电容性和导电性.
- 的形状特征表明了memcapacitance和meminductance的开始.
- 设备稳定性,以韦布尔分布斜率衡量,通过光照来改善.
- 发现Memcapacitance在600个周期和60秒后消失.
- 根据I-V特征确定了陷辅助传导和欧米行为.
结论:
- 该Cu/CuO/SS装置同时表现出电阻,电容和导电 (MEMRIC).
- 光照明增强了设备的稳定性,并为光电阻应用提供了潜力.
- 这种单一设备的多功能行为为新的低功耗电子应用铺平了道路.
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