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Updated: Jun 14, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Published on: October 23, 2018

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FS-iTFET:使用Schottky感应源和GAA设计推进道FET技术

Jyi-Tsong Lin1, Wei-Heng Tai2

  • 1Department of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, ROC. jtlin@ee.nsysu.edu.tw.

Discover nano
|September 3, 2024
PubMed
概括

我们开发了一种新的Forkshape纳米板感应道场效应晶体管 (FS-iTFET) 具有Schottky感应源. 这种先进的晶体管设计显著改善了下值摆动和下一代电子产品的ON状态电流.

关键词:
叉子的形状是如何形成的门周围所有的 (GAA)异质连接 异质连接 异质连接线路道的道设计金属半导体接口 半导体接口一个纳米板.斯科特基屏障是一个障碍.小门下波动 (SS) 是指一个小门下波动.道场效应晶体管 (TFET) 的使用

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