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在无形CoSi薄膜中进行非常规的磁阻和电阻缩放

Lorenzo Rocchino¹, Alan Molinari¹, Igor Kladaric^1,2

¹IBM Research Europe - Zurich, Saümerstrasse 4, 8803, Rüschlikon, Switzerland.

Scientific reports

|September 4, 2024

概括

研究人员探索了新一代互联网的酸 (CoSi) 薄膜. 薄无形CoSi薄膜显示电阻降低,与预测相反,表明先进电子的潜力.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
电气工程电气工程

背景情况:

由于表面散射,铜 (Cu) 互连电阻在10nm以下显著增加,这对CMOS技术构成了挑战.
拓材料为超级级互连 (低于5nm) 提供了潜在的解决方案,这是由于拓保护的表面状态减少了电子散射.

研究的目的:

调查纹理和无形化 (CoSi) 薄膜的电阻缩放趋势.
评估CoSi作为未来互连的潜在低电阻材料.

主要方法:

使用分子光束表层氧化薄膜 (2-82.5 nm厚度) 的沉积.
在纹理和无形薄膜上进行电阻测量.
测量磁传输以分析传输机制.

主要成果:

与标准模型相反,薄无形的CoSi薄膜表现出降低的电阻,与表面主导的传输相一致.
在缩放的CoSi薄膜中观察到显著增强磁阻.
复杂的运输机制在纳米厚度的高度混乱的电影中得到了突出展示.

结论:

对于相互连接的应用,CoSi薄膜是有前途的,特别是尺寸缩小的无形薄膜.
表面主导的运输和复杂的机制是纳米级CoSi互连的性能关键因素.
对无序拓材料的进一步研究可能会导致先进的半导体技术的突破.

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