在无机孔运输层中双向抑制界面离子迁移,用于矿发光二极管
Lunyao Pan1, Xiankan Zeng1, Yuanxiao Qu1
1Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, P. R. China.
Small (Weinheim an der Bergstrasse, Germany)
|September 6, 2024
概括
在矿发光二极管 (PeLED) 中的铜锡硫化物 (CZTS) 孔输送层中添加15-皇冠-5,可以防止离子迁移和缺陷形成. 这一策略显著提高了PeLED的性能和稳定性.
科学领域:
- 材料科学 材料科学 材料科学
- 光电学是指光电子产品.
- 化学工程是化学工程的重要组成部分.
背景情况:
- 铜硫化 (CZTS) 是矿发光二极管 (PeLED) 的一个有前途的孔输送材料,因为它具有有利的电子特性和成本效益.
- 然而,金属离子从CZTS迁移到矿排放层 (EML) 降低了设备性能,影响了矿质量并增加了非辐射重组.
研究的目的:
- 开发一种策略,以抑制CZTS孔输送层 (HTL) 和PeLED中的矿EML之间的离子迁移.
- 通过改善电荷传输和减少HTL/EML接口上的缺陷来提高PeLED的性能和稳定性.
主要方法:
- 一个双向定策略使用15-皇冠-5以太 (15C5) 添加到CZTS HTL.
- 密度函数理论 (DFT) 的计算阐明了15C5与金属子 (Cu+, Zn2+, Sn2+) 之间的相互作用.
- 优化PeLED设备的制造和表征.
主要成果:
- 15C5与Cu+,Zn2+和Sn2+离子形成宿主-客人复合体,有效地阻碍了它们的迁移.
- 15C5通过与氧气和电子阴性腔相互作用,中和FAPbBr3膜中的 (Pb) 缺陷,减少非辐射重组.
- 经过优化的PeLED显示,峰值外部量子效率 (EQE) 从3.12%增加了3.5倍,从11.08%增加到11.08%;最大发光度 (Lmax) 显著增加.
结论:
- 使用15C5的双向定策略有效地抑制金属离子迁移和使HTL/EML接口上的缺陷无效.
- 这种方法显著提高了PeLED的性能,为改善无机HTL稳定性提供了可行的解决方案.
- 这些发现为解决用于光电子应用的无机HTLs中常见的问题提供了有价值的见解.
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