主导散射机制限制了化的电子流动性
Sourav Rudra1,2, Dheemahi Rao1,2, Samuel Poncé3,4
1Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore 560064, India.
Nano letters
|September 6, 2024
概括
化 (ScN) 中的电子流动性受到各种散射机制的限制. 电离杂质和粒度边界散射显著降低了移动性,阻碍了设备应用.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 半导体物理 半导体物理
背景情况:
- 化物半导体中的电子流动性受到来自声子的散射,缺陷,粒边界和位移的限制.
- 化 (ScN) 是一个有前途的半导体,表现出由其生长条件影响的可变电子流动性.
- 了解散射机制对于优化Scn对设备应用程序至关重要.
研究的目的:
- 阐明在化 (ScN) 中限制电子流动性的散射机制的等级.
- 提供对影响ScN电子移动性的因素的微观理解.
- 为设备应用确定增强ScN电子移动性的策略.
主要方法:
- 在理论计算中采用 *ab initio* 博尔兹曼运输形式主义.
- 进行实验测量以验证理论发现.
- 分析了电子流动性的温度和兴奋剂依赖性.
主要成果:
- 弗罗里希相互作用在室温下约为524cm2/V·s的ScN电子流动性的内在上限.
- 电离杂质和粒度边界散射被确定为减少电子流动性的主要因素.
- 关于移动性温度和兴奋剂依赖性的实验数据被模型复制得很好,包括空位和氧杂质.
结论:
- 散射机制,特别是电离杂质和颗粒边界效应,显著阻碍了Scn中的电子流动性.
- 建议采用调制兴奋剂和极性不连续性兴奋剂等策略,以减轻电离杂质散射.
- 为了实现高级设备应用的高移动性Scn,需要解决这些散射限制.
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