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SrTiO₃和 (Ba,Sr) TiO₃是使用原子层沉积在 SrRuO₃上长大的膜

Bo-Eun Park¹, Jaeho Lee¹, Jeongil Bang¹

¹Samsung Advanced Institute of Technology, Samsung Electronics, Suwon-si, Gyeonggi-do 16678, Republic of Korea.

ACS applied materials & interfaces

|September 6, 2024

概括

研究人员探索了新的高介电常数 (k) 材料,特别是酸 (STO) 和酸 (BSTO),用于高级动态随机访问存储器 (DRAM) 电容器. 这些三元氧化物提供了超越传统限制的性能提升.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
固态物理固态物理

背景情况:

对于动态随机存取内存 (DRAM) 电容器的常规二元氧化物具有有限的介电常数 (k < 100).
下一代DRAM需要具有极低等效氧化物厚度 (EOT) 的材料.

研究的目的:

研究三元氧化物,酸 (STO) 和 (Ba,Sr) TiO3 (BSTO),作为高k DRAM电容器的替代品.
优化材料性能,以提高性能和可靠性.

主要方法:

在 SrRuO3 (SRO) 上使用原子层沉积 (ALD) 的STO和BSTO的长轴增长.
在低温 (300°C) 的现场结晶,通过SRO/STO结构兼容性实现.
通过Ba染调整STO的介电性质.

主要成果:

在SRO上的STO在厚度低至50 Å时保持了优越的结晶性,而没有薄膜变形.
在~50%的Ba剂下,BSTO实现了高介电常数 (k_max:527).
BSTO表现出低泄漏电流 (3.9 × 10^-8 A cm^-2 @ 1 V) 和高可靠性 (10^12 周期).

结论:

三级氧化物STO和BSTO是下一代DRAM电容器的有希望的替代品.
ALD能够实现低温,高质量的薄膜生长,具有可调节的特性.
优化的BSTO为极端的EOT要求提供了可行的解决方案.

关键词:

(Ba,Sr) TiO3O3 的时间.在DRAM电容器的电容器.斯里兰卡斯里兰卡在SrTiO3O3中使用.原子层沉积的原子层沉积.

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