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Updated: Jun 13, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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在单层和双层石墨烯插入的MoS2/金属接触器中调整Schottky屏障高度

Xumei Zhao1, Caijuan Xia2, Lianbi Li1

  • 1School of Science, Xi'an Polytechnic University, Xi'an, 710048, Shaanxi, China.

Scientific reports
|September 8, 2024
PubMed
概括

将石墨烯插入到二硫化 (MoS2) /金属接触器中,可显著降低肖特基屏障高度. 这项研究探讨了石墨烯.

关键词:
电子属性 电子属性第一个原则计算.在MoS2中,MoS2就是MoS2.斯科特基屏障是一个障碍.

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