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Updated: Jul 1, 2026

Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding
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Published on: January 9, 2014

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低温Cu-Cu在空气环境中直接结合,通过超快速的表面谷物生长

Yun-Fong Lee1, Yu-Chen Huang1, Jui-Sheng Chang1

  • 1Department of Chemical and Materials Engineering, National Central University, No. 300, Zhongda Road, Zhongli District, Taoyuan 32001, Taiwan.

Royal Society open science
|September 12, 2024
PubMed
概括

在130°C的空气中使用近原子表面的细粒度Cu薄膜实现直接铜 (Cu) 粘合. 超快速的谷物生长使结合能够在没有先进的后处理的情况下进行结合,这对于微电子非常重要.

关键词:
直接结合 CuCu 的直接结合.电是电的方法之一.接近原子尺度的表面表面.自燃自的 自燃自的谷物生长速度超快的谷物生长速度超快

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