Cl2 基因对干燥的作用 研涂层金属氧化物耐受性的干燥发展
Soo Namgoong1, Hee Ju Kim1, Yeo Kyung Kang1
1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea.
ACS applied materials & interfaces
|September 12, 2024
概括
这项研究探讨了 (Cl2) 基的干燥发展,以抗锡氧化物金属氧化物 (MOR). 它发现,暴露在紫外线下的MOR蚀刻速度较慢,从而使负色调开发成为先进的光刻技术.
科学领域:
- 材料科学 材料科学 材料科学
- 化学工程是化学工程的重要组成部分.
- 纳米技术 纳米技术
背景情况:
- 下一代光刻需要超越传统湿开发的先进的图案制作技术.
- 像锡氧化物 (锡OH) 这样的金属氧化物抗体 (MOR) 是高分辨率图案的有希望的候选者.
- 了解干燥发展机制对于优化MOR性能至关重要.
研究的目的:
- 通过使用 (Cl2) 基来,研究氧化 (OH) MOR与螺旋涂层的干燥发展机制.
- 分析紫外线暴露对锡OH表面结合状态和蚀刻行为的影响.
- 评估使用Cl2基质血开发负色调的可行性.
主要方法:
- 锡OH薄膜的螺旋涂层.
- 在不同的工艺时间和温度下使用Cl2基源进行干燥开发.
- 对暴露在紫外线和未暴露的OH薄膜进行表面分析.
主要成果:
- 不暴露于紫外线的锡OH表现出1.77 nm/分钟的线性蚀刻速率.
- 暴露在紫外线下的锡OH显示了较慢的蚀刻速率 (1.46 nm/min) 和由于较高的氧含量 (Sn-O粘合) 导致的初始厚度增加.
- 负色调的发展是在-20°C时实现的,非紫外线暴露的薄膜被完全去除,而紫外线暴露的薄膜仍然存在,显示出不同的蚀刻速率.
结论:
- 基干燥发育为MORs提供了一种可行的替代水湿发育方法.
- 暴露在紫外线和未暴露的锡OH之间的不同蚀刻速率使得负色调图案成为可能.
- 这种技术有可能克服下一代石版画中诸如图案倾斜和线边粗等挑战.
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