旋转厅诱导的双线电磁电阻
Dong-Jun Kim1, Kyoung-Whan Kim2,3, Kyusup Lee1,4
1Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore.
Nature materials
|September 12, 2024
概括
双线磁电阻 (BMER) 是3D系统中的一个普遍现象,不需要旋转纹理. 大量旋转霍尔效应使BMER成为可能,这对于反铁磁旋转电子和先进设备至关重要.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 这就是Spintronics.
- 运输现象是运输现象.
背景情况:
- 磁电阻是磁性数据存储,计算和传感器的关键.
- 非线性磁电阻,就像双线性磁电阻 (BMER) 一样,正在引起人们的注意.
- BMER与电场和磁场都是成比例的.
研究的目的:
- 为了证明BMER作为3D系统中的一般现象.
- 阐明旋转霍尔效应在BMER中的作用.
- 探索BMER在反铁磁自旋电子学中的重要性.
主要方法:
- 运输现象在3D系统中的理论分析.
- 研究在接口上的旋转积累的影响.
- 将BMER连接到散发旋转霍尔效应.
主要成果:
- BMER发生在没有动量空间旋转纹理的3D系统中.
- 当接口旋转积累不同时,旋转霍尔效应驱动BMER.
- BMER的标志与重金属的旋转霍尔效应标志相关.
结论:
- BMER是3D系统中的一般非线性运输特征.
- 大量旋转霍尔效应是BMER的起源.
- 对于抗铁磁螺旋电子和未来的设备应用来说,BMER至关重要.
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