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在微型面料表面陷中的AC Zeeman效应
M Ivory1, C D Nordquist1, K Young1
1Sandia National Laboratories, Albuquerque, New Mexico 87185, USA.
The Review of scientific instruments
|September 13, 2024
概括
研究人员在被困离子量子处理器和原子钟中减少了AC Zeeman效应. 关键陷设计的改进提高了离子限制,从而导致更稳定的量子计算和精确的计时.
科学领域:
- 量子信息科学 量子信息科学
- 原子物理 原子物理
- 微型制造业的微型制造
背景情况:
- 捕获的离子对于量子计算量子位和原子钟频率标准至关重要.
- 高精度过渡提供磁场不敏感性,但受到来自射频限制场的AC Zeeman效应的影响.
研究的目的:
- 测量对171Yb+离子2S1/2高精度过渡的AC Zeeman效应.
- 识别微型表面陷设计,以尽量减少这种频率转移.
主要方法:
- 在各种微型表面陷中测量了171Yb+高精度过渡的频率转移.
- 陷设计的比较,重点关注射频电极几何和接地.
主要成果:
- 两个设计修改显著减少了AC Zeeman效应:一个RF地面层和对称的RF电极.
- 这些修改改进了交流磁场取消,减少频率转移和设备变化.
结论:
- 优化的微型制陷设计可以减轻被困离子中的AC Zeeman效应.
- 这些改进提高了量子计算的同质性和原子钟的精度.
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