相关实验视频

Updated: Jun 13, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.2K

单极垂直堆叠单层 ReS2/MoS2异极连接的屏障高度的门调节

Gowtham Polumati1, Chandra Sekhar Reddy Kolli1, Aayush Kumar1

  • 1Department of Electrical and Electronics Engineering, BITS Pilani Hyderabad Campus, Hyderabad, 500078, India.

Scientific reports
|September 13, 2024
PubMed
概括

这项研究提出了一个垂直堆叠的ReS2/MoS2场效应晶体管 (FET),表现出n型特征. 由于在异构结构接口上形成2D电子气体,该设备实现了高载体流动性.

关键词:
在FET中,FET是FET.在MoS2中,MoS2就是MoS2.ReS2 ReS2 ReS2 ReS2 ReS2 是一个非常复杂的系统.vDW 异质连接的异质连接

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy14:16

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