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Ga₂O₃的外生长:一个审查

Imteaz Rahaman¹, Hunter D Ellis¹, Cheng Chang²

¹Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT 84112, USA.

Materials (Basel, Switzerland)

|September 14, 2024

概括

贝塔相氧化物 (β-Ga₂O₃) 显示出由于其超宽带隙,对先进的电子有希望. 本综述详细介绍了高质量的β-Ga₂O₃薄膜的表轴生长技术,这对于下一代设备至关重要.

科学领域:

材料科学材料科学材料科学
半导体物理半导体物理

背景情况:

β-阶段氧化物 (β-Ga₂O₃) 是一种超宽带隙半导体,带隙约4.8 eV,临界电场约8 MV/cm.
它的性能非常适合下一代动力电子和深紫外线光电子.
大型单晶基质和受控的n型兴奋剂是β-Ga₂O₃的关键优势.

研究的目的:

审查最近 β-Ga₂O₃的表生长方面的进展.
为了突出实现高增长率,低缺陷密度,卓越的晶体质量和高载体流动性的进展.
为UWBG半导体和功率电子领域的研究人员和工程师提供资源.

主要方法:

分子束化 (MBE) 是一种分子束化技术.
金属有机化学蒸汽沉积 (MOCVD) 是一种
化物蒸汽阶段乙氧化 (HVPE)
雾化学蒸汽沉积 (雾CVD) 是一种
脉冲激光沉积 (PLD) 是指脉冲激光沉积的方法.
低压化学蒸汽沉积 (LPCVD) 是一种

主要成果:

对β-Ga₂O₃进行了各种表轴生长技术的探索.
详细介绍了优化增长以实现高绩效的进展情况.
专注于实现设备级的 Ga₂O₃ 表轴薄膜.

结论:

了解生长机制对于可扩展的β-Ga₂O₃制造至关重要.
对表轴生长的持续研究对于推进UWBG半导体技术至关重要.
这一综述是该领域的关键资源.

关键词:

这是一个HVPEHVPE.在LPCVD中使用LPCVD.MBE 是一个MBE.在MOCVD中,MOCVD是最常见的.雾 CVD 的情况.在PLD PLD中使用.表皮轴生长的表皮轴生长.这就是β-Ga2O3的含量.

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