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Updated: Jun 13, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

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使用自组装单层的增强MoS2场效应晶体管的性能:减轻介电层散射和提高设备性能的一项有希望的战略

Li Cao1,2, Junqing Wei3, Xianggao Li1,2

  • 1School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China.

Molecules (Basel, Switzerland)
|September 14, 2024
PubMed
概括

自组装单层 (SAM) 通过改进接口特性来增强二维二硫化物场效应晶体管 (2D-MoS2 FET). 这一策略通过减少散射,显著提高了设备的移动性和性能.

关键词:
在MoS2中,MoS2就是MoS2.两极运动时刻是双极运动时刻.场效应晶体管的领域效应晶体管.移动性是一种流动性.音声波散射是一种声波散射.自己组装的单层单层.

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