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在AlN-SiC接口和AlN的谷物边界的热传输

Taesoon Hwang¹, Ping-Che Lee², Andrew C Kummel²

¹Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080-3021, United States.

ACS applied materials & interfaces

|September 17, 2024

概括

化 (AlN) 在碳化 (SiC) 上的热传输受到接口和颗粒边界的阻碍. 控制氧气密度可以抑制缺陷,降低热电阻,从而实现更好的高功率电子.

科学领域:

材料科学材料科学材料科学
固态物理固态物理
热力工程是热力工程中的一个.

背景情况:

化 (AlN) 对于高功率电子产品至关重要,在碳化 (SiC) 上充当缓冲层和热导体.
了解AlN-SiC接口和AlN粒边界内的热传输机制对于设备性能至关重要.
颗粒边界在AlN沉积过程中形成,影响热特性.

研究的目的:

研究AlN-SiC接口和AlN逆转域边界 (IDB) 的热传输特性.
为了确定这些接口和边界的热电阻 (TR) 的起源.
模拟元素混合和空隙形成对热阻的影响.

主要方法:

利用基于非平衡的音声传输模型绿色函数形式主义.
运用第一原则计算来模拟接口和粒度边界模型.
分析了元素混合和空缺缺陷的形成和影响,特别是V_Al + 3O_N.

主要成果:

AlN-SiC接口和AlN IDB的热电阻 (TR) 比散装AlN和SiC的热电阻要高得多.
电荷平衡缺陷V_Al + 3O_N的形成是热力学上有利的,由氧气诱导.
这种缺陷增加了AlN-SiC接口和AlN粒边界的TRs,这是由于大量的质量变化造成的.

结论:

空缺缺陷,特别是V_Al + 3O_N,是AlN-SiC系统中高热电阻的主要原因.
过量的氧气促进V_Al缺陷的形成,导致TR的持续增加.
在合成过程中控制低氧密度至关重要,以抑制V_Al + 3O_N形成并降低热电阻,可能达到实验热极限电阻 (TBR) 值.

关键词:

在 AlNSiC 接口界面上.逆转域边界 (IDB) 是指一个逆转域边界.氧气污染氧气污染语音语音语音语音热极限电阻 (TBR) 是指热极限的电阻.

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