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Updated: Jun 12, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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通过原子层沉积的二氧化瓦纳:为下一代记忆器件提供有前途的材料.

Thomas Ratier1, Salomé Rigollet1, Paolo Martins1

  • 1Thales Research and Technology, Campus Ecole Polytechnique, 1 avenue Augustin Fresnel, 91767 Palaiseau Cedex, France.

The journal of physical chemistry letters
|September 18, 2024
PubMed
概括

原子层沉积合成高质量的二氧化瓦纳 (VO2) 薄膜,用于先进的存储器件. 这些设备显示出出色的稳定性和多层记忆,为可扩展的神经形态计算应用铺平了道路.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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