MOSFET: Enhancement Mode
MOSFET: Depletion Mode
MOSFET Amplifiers
您也可能阅读
通过共同作者、期刊和引用图与本文相关的文章。
Xuewen Chen1, Wei Lin1, Xu Hu1
1School of Physics and Optoelectronics; State Key Laboratory of Luminescent Materials and Devices; Guangdong Engineering Technology Research and Development Center of Special Optical Fiber Materials and Devices; Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou, China.
研究人员探索了动态增益耗尽和恢复 (GDR) 效应,以了解千兆赫兹 (GHz) 光纤激光器. 这项研究揭示了低值模式锁定的新机制,使高级应用程序的重复率更高.
科学领域:
背景情况:
研究的目的:
主要方法:
主要成果:
结论: